The major difference between its layers is that Emitter region is 5% less than the size of Collector region whereas the N-region is larger one compared to both P-type regions the reason behind that, the Punch through effect occurs in … A microwave generator which operates between hundreds of MHz to GHz. (i) A zener diode is like an ordinary diode except that it is properly doped so as to have a sharp breakdown voltage. A diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other. View Answer: Answer: Option B. A zener diode can be used as a voltage regulator to provide a constant voltage from a source whose voltage may vary over sufficient range. Here, we are presenting those MCQs in a different style. 11. 10. Let us discuss the diode which is a two-terminal electrical device. Modulator A bulk effect device. 17 The main disadvantage of using coaxial cable for microwave signals is its A High attenuation. F. None of the above, 9. Option C: Klystron. Rain is the major challenge to design reliable earth to satellite microwave link at higher frequencies in tropical regions. For a PN junction diode, the current in reverse bias may be, Enter the code above here : In terms of noise figure an IMPATT diode is not good as in comparison with the TWT amplifier or Gunn diode oscillator or klystron tube. Choose the letter of the best answer in each questions. TRAPATT Diode. BARITT Diode is two terminal and three-layer device (P-N-P Layer). 1) Load resistor , 2) Zener diode , 3) None of the above , 4) Transistor Q1 d. lesser sensitivity to harmonics. D. 23V When a 10 V peak input voltage is applied to limit the output voltage of positive limiter of 5 v, then the bias voltage is, 7. Because the avalanche is a high noise process, so the IMPATT is very noisy diode, the value of noise figure is 30 dB. TRAPATT mode can operate at low frequencies since discharge time of plasma can be considerably greater than the nominal transit time of the diode at high field. 12.45V Indicate which of the following diodes will produce the highest pulsed power output: a. Varactor. A simple model of a diode operating in the TRAPATT mode is proposed which should be useful in the design of TRAPATT circuits. Drawbacks or disadvantages of TRAPATT diode. SAMPLE MCQ. Option B: Magnetron. Travelling wave parametric amplifiers are used to (A) provide a greater gain (B) reduce the number of varactor diodes required (C) avoid the need for cooling (D) provide a greater bandwidth. High resistance F. None of the above, A. TRAPATT DIODE TRApped-Plasma Avalanche Trigged Transit Diode 12. List out the high frequency limitations of bipolar devices. 45428811 Microwave Ppt - Free download as Powerpoint Presentation (.ppt), PDF File (.pdf), Text File (.txt) or view presentation slides online. TRAPATT DIODE The TRAPATT (Trapped Plasma Avalanche Triggered Transit) diode is another microwave energy which is used as both amplifier and oscillator. That eliminates fluctuation in a rectified voltage and produce a relatively smooth DC voltage, a component called B. Which of the following is used as a high power microwave oscillator? In microwave range most noisy semiconductor device is. B. F. None of the above, 6. The capacitance of a reverse biased PN junction, A.The junction current is due to minority carriers only, B.The junction current at equilibrium is zero as equal but opposite carriers are crossing the junction, C.The junction current reduces with rise in temperature, D.The junction current at equilibrium is zero as charges do not cross the junction, 5. Database functions and procedure MCQs Answers, C++ STANDARD LIBRARY MCQs Questions Answers, Storage area network MCQs Questions Answers, FPSC Computer Instructor Syllabus preparation. An equivalent circuit for the Trapatt diode during plasma extraction is presented, and it is shown that this equivalent circuit contributes to a complete time-domain model for the device. Labels: MULTIPLE CHOICE … Center tapped secondary IMPATT and TRAPATT are usually made of silicon and their voltamperic characteristic usually look like a usual diode. F. None of the above, 11. Email This BlogThis! E. All of the above 2 diodes F. None of the above, A. Disadvantages of IMPATT diode. E. Both b & c Option B: Low bandwidth. Which of the following diodes has a p-n-i-p structure? C. Amplifier Mention the basic materials for Microwave Integrated circuits. 1. This phenomenon is termed as (A) mode locking (B) pad locking (C) locking (D) none of the above. When the arrow of a crystal diode is positive w.r.t. The biggest advantage of the TRAPATT diode over the IMPATT diode is its (A) Low noise (B) Higher efficiency The order of reverse current in a diode is The major advantage of TWT over Klystron (A) higher gain (B) higher frequency (C) higher output ... A Gunn diode (C) A step recovery diode (D) An IMPATT diode. F. None of the above, A. mcq microwave engineering 1. 2. F. None of the above, 2. Option C: High source power. A.A bulk effect device Your Comments. PDF | On Apr 8, 2015, Vatsal N Shah published TRAPATT DIODE | Find, read and cite all the research you need on ResearchGate E. all of the above Solution: 2. But GaAs has a major disadvantage of complex fabrication process and higher cost. SAMPLE MCQ. Q151 THE BIGGEST ADVANTAGE OF GALLIUM ANTIMONY OVER GERMANIUM FOR TUNNEL DIODE USE IS THAT FORMER HAS A (a)lower noise (b)higher ion mobility (c)larger voltages swing (d)simpler fabrication process ans-c Q152 -VE RESISTANCE IS OBTAINED WITH A GUNN DIODE BECAUSE OF (a)electron transfer to less mobile energy level (b)avalanche breakdown with the high voltage gradient … TRAPATT DIODE ANKIT KUMAR PANDEY M.TECH 3rd sem ALLAHABAD UNIVERSITY 1 ankit_pandey 2. TRAPATT diode generally exhibit a considerably higher noise figure than IMPATT diode and of upper operating frequency appears to be practically limited to below the millimeter wave region. The main advantage is their high-power capability; … Reverse bias E. All of the above Let’s begin with Set 1. It also has very high levels of harmonics as a result of the short current pulses that are used. Amar - Free download as Powerpoint Presentation (.ppt), PDF File (.pdf), Text File (.txt) or view presentation slides online. Principles of Operation A high field avalanche zone propagates through the diode and fills the depletion layer with a dense plasma of electrons and holes that. An IMPATT diode (IMPact ionization Avalanche Transit-Time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. Distinguish between hybrid and monolithic MICs. In the year 1958 WT read discovered concept of avalanche diode. In a PN junction with no external voltage, the electric field between acceptor and donor ions is called a. E. All of the above Solution: 12. E. 5 diodes D. TUNNEL DIODE \ Posted by Unknown at 5:49:00 AM. View Answer Answer: Gunn DIODE 20 A amplifier has a power gain of 200. E. Both forward and reverse “Diode and Application Electronics MCQs” is the set of frequently asked Multiple Choice questions and these MCQs are asked in different test in the past in different test. D. Amplifier The TRAPATT diode is normally used as a microwave oscillator. MCQ in Modulation Part 3 as part of the Communications Engineering (EST) Board Exam. 0.7 V Q4. In many respects the IMPATT diode is an unusual diode in that it is able to provide high power RF signals at microwave frequencies using a structure that is not that far different from the basic PN junction. 9.The disadvantage of IMPATT Diode a.Lower efficency. An IMPATT diode (IMPact ionization Avalanche Transit-Time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. This test is Rated positive by 87% students preparing for Electrical Engineering (EE).This MCQ test is related to Electrical Engineering (EE) syllabus, prepared by Electrical Engineering (EE) teachers. It was first reported by Prager in 1967. Candidates can check the answers to the question by clicking on the View Answer button. Forward bias What is its gain in dB? F. None of the above, 13. Your name: Your Email: Your Comments: 2. 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